OVEN system
IGZO high temperature firing device
overview
-IR type high temperature heating furnace (450 ℃) in the liquid crystal (LCD) process.
・ Oxide TFT is more than amorphous silicon (a-si) TFT
Polycrystalline silicon (Poly-si) with high electron mobility
Higher uniformity than TFT,
It is in the limelight as a next-generation display.
・ Through the chemical reaction of the oxide thin film during heat treatment
Free electrons are generated and electrical properties are improved
Applies to the production of oxide TFTs.
feature
・ The annealing efficiency can be improved with steam.
Construction.
-Original nozzle design for uniform steam injection.
-O₂: Precise control of H₂O mixture.
・ Large area substrate processing is possible. (2-8 generations)
specification
·Device configuration
Input method: Vertical installation
Heating method: Far-infrared type electric resistance heating
・ Application process:
IGZO (In (indium), Ga (gallium),
Zn (zinc), O (oxygen)),
TFT Active layer heat treatment, ESL heat treatment, BCE heat treatment
* Please contact us for detailed structure and specifications .